Nxp Mosfet Automotive
Nxp Mosfet
| Номер произв | BF989 | ||||
| Описание | N-channel dual-gate MOS-FET | ||||
| Производители | NXP Semiconductors | ||||
| логотип | |||||
1Page
DATA SHEET N-channel dual-gate MOS-FET File under Discrete Semiconductors, SC07
N-channel dual-gate MOS-FET BF989 • Protected against excessive input voltage surges by and source. • UHF applications such as: – Professional communication equipment. PIN 2 4 DESCRIPTION d drain g1 gate 1 Depletion type field-effect transistor in a plastic SOT143 and substrate. 4 d g1 Top view MAM039 Fig.1 Simplified outline (SOT143) and symbol. SYMBOL CONDITIONS VDS Ptot Yfs Crs drain-source voltage total power dissipation transfer admittance feedback capacitance up to Tamb = 60 °C f = 1 MHz; ID = 7 mA; VDS = 10 V; VG2-S = 4 V f = 800 MHz; GS = 2 mS; BS = BSopt; ID = 7 mA; − − 12 25 MAX. 20 150 − − V mW mS fF April 1991
N-channel dual-gate MOS-FET BF989 In according with the Absolute Maximum Rating System (IEC 134). PARAMETER VDS ID(AV) IG2-S Tstg drain-source voltage average drain current gate 2-source current storage temperature range up to Tamb = 60 °C; note 1 SYMBOL CONDITIONS thermal resistance from junction to ambient in free air; note 1 Note to the Limiting values and the Thermal characteristics 1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm. − − − −65 MAX. 20 ±10 200 150 V mA mA °C VALUE UNIT handboo2k,0h0alfpage (mW) MGE792 0 100 200 Fig.2 Power derating curve. 3 | |||||
| Всего страниц | 8 Pages | ||||
| Скачать PDF | [ BF989.PDF Даташит ] | ||||
NXP’s GD3160 is an advanced single-channel gate driver for HV power inverters used in EVs. Fast protection makes it ideal for SiC applications. Protection and fault reporting features allow users to optimize conditions for driving and protecting almost any SiC MOSFET or Si IGBT power switch. PowerMOSFETs always pass through the Linear Mode, during switching. Modern FETs are optimised for low resistance but often at the expense of.